1200-2000 Datasheet | Specifications & PDF Download

Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-4, 1200 V, 7.1 mohm UF3N120007K4S Description onsemi’s UF3N120007K4S is a 1200 V, 7.1 mW

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Datasheet SDS120J005D3 1200V/5A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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Current Transducers HAZ 4000..20000-SB For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primar

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PSE Technology Corporation SPECIFICATION FOR APPROVAL CUSTOMER NOMINAL FREQUENCY PRODUCT TYPE SPEC. NO. ( P/N ) CUSTOMER P/N ISSUE DATE VERSION APPRO

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RECTIFIER DEVICE - Phase Control Thyristors - Capsule Types PDF Data Sheet Available VDRM VRRM Range New Part Number (Note 5) (V) N086CH12-16 N105CH12

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APS12000 and APS12060 2 - Vertical and Planar Hall-Effect Latches FEATURES AND BENEFITS • ASIL A functional safety compliance • Planar and vertical

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PSE Technology Corporation SPECIFICATION FOR APPROVAL CUSTOMER NOMINAL FREQUENCY PRODUCT TYPE PART NUMBER CUSTOMER P/N ISSUE DATE VERSION 12.000000

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MCC Features • • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # R1200F T

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MCC Features
     omponents 21201 Itasca Street Chatsworth  # $ % # S1Q THRU S1ZZ 1 Amp

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4 Slot Ethernet Based IP DSL Access m o Multiplexer 12000 c . Ethernet-based U IP DSLAM for Central Office/ 4 t Office or MDU/Campus deployments Remot

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Datasheet SDS120J002D3 1200V/2A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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MCC Features • • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # R1200F T

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