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UF3N120007K4S SiC JFET

UF3N120007K4S Description

Silicon Carbide (SiC) JFET * EliteSiC, Power N-Channel, TO247-4, 1200 V, 7.1 mohm UF3N120007K4S .
onsemi’s UF3N120007K4S is a 1200 V, 7.

UF3N120007K4S Features

* Single Digit On-Resistance
* Operating Temperature: 175 C (Max)
* High Pulse Current Capability
* Excellent Device Robustness
* Silver-Sintered Die Attach for Excellent Thermal Resistance

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Datasheet Details

Part number
UF3N120007K4S
Manufacturer
onsemi
File Size
346.97 KB
Datasheet
UF3N120007K4S-onsemi.pdf
Description
SiC JFET

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SiC JFET onsemi
onsemi UF3N120007K4S-like datasheet