UF3C170400K3S Datasheet - onsemi

UF3C170400K3S SiC Cascode JFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C170400K3S Features

* Typical On-resistance RDS(on),typ of 410 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected, HBM Class 2

* This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical Application

UF3C170400K3S-onsemi.pdf

UF3C170400K3S Datasheet Preview — Preview of UF3C170400K3S PDF

Datasheet Details

Part number:

UF3C170400K3S

Manufacturer:

onsemi

File Size:

305.05 KB

Description:

Sic cascode jfet.

UF3C170400K3S Distributor

📁 Related Datasheet

UF3C170400K3S MOSFET (UnitedSiC)

UF3C170400B7S SiC Cascode JFET (ON Semiconductor)

UF3C120040K3S MOSFET (UnitedSiC)

UF3C120040K3S SiC Cascode JFET (onsemi)

UF3C120040K4S SiC Cascode (UnitedSiC)

UF3C120080K3S SiC Cascode JFET (ON Semiconductor)

UF3C120080K3S SiC MOSFET (UnitedSiC)

UF3C120080K4S high performance F3 SiC fast JFET (UnitedSiC)

TAGS

UF3C170400K3S UF3C170400K3S SiC Cascode JFET onsemi