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UF3C170400K3S Datasheet - onsemi

SiC Cascode JFET

UF3C170400K3S Features

* Typical On-resistance RDS(on),typ of 410 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected, HBM Class 2

* This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical Application

UF3C170400K3S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C170400K3S Datasheet (305.05 KB)

Preview of UF3C170400K3S PDF

Datasheet Details

Part number:

UF3C170400K3S

Manufacturer:

onsemi

File Size:

305.05 KB

Description:

Sic cascode jfet.

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UF3C170400K3S SiC Cascode JFET onsemi

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