UF3C120150K4S - SiC Cascode JFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	UF3C120150K4S
Manufacturer	ON Semiconductor
File Size	440.51 KB
Description	SiC Cascode JFET
Datasheet	UF3C120150K4S Datasheet
Additional preview pages of the UF3C120150K4S datasheet.

Product details

Description

This SiC cascode JFET co-packages onsemi’s high performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.This series exhibits very fast switching using a 4-terminal TO247-4 package and the best reverse recovery characteristics of any device of similar ratings.These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Features

Typical On-resistance RDS(on),typ of 150 mW.
Maximum Operating Temperature of 175 °C.
Excellent Reverse Recovery.
Low Gate Charge.
Low Intrinsic Capacitance.
ESD Protected, HBM Class 2.
TO-247-4 Package for Faster Switching, Clean Gate Waveforms.
This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Published: Apr 12, 2025 |