UF3C120150K4S Datasheet - ON Semiconductor

UF3C120150K4S SiC Cascode JFET

This SiC cascode JFET co-packages onsemi’s high performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO247-4 package and the best reverse recovery characterist.

UF3C120150K4S Features

* Typical On-resistance RDS(on),typ of 150 mW

* Maximum Operating Temperature of 175 °C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected, HBM Class 2

* TO-247-4 Package for Faster Switching, Clean Gate

UF3C120150K4S-ONSemiconductor.pdf