UF3C120150B7S Datasheet - UnitedSiC

UF3C120150B7S, 1200V SiC Cascode

DATASHEET UF3C120150B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 150 mohm Rev.C, Jan 2025 .
1 7 Tab G (1) KS (2) D (Tab) S (3-7) Part Number UF3C120150B7S Package D2PAK-7L Marking UF3C120150B7S This SiC FET device is based on a unique.

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Datasheet Details

Part number:

UF3C120150B7S

Manufacturer:

UnitedSiC

File Size:

851.38 KB

Description:

1200V SiC Cascode

Features

* w On-resistance RDS(on): 150mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 67nC w Low body diode VFSD: 1.46V w Low gate charge: QG = 25.7nC w Threshold voltage VG(th): 4.4V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin sou

Applications

* Any controlled environment such as w Telecom and Server Power w Industrial power supplies w Power factor correction modules w Motor drives w Induction heating 1 Datasheet: UF3C120150B7S Rev. C, Jan 2025 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1

UF3C120150B7S Distributors

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UF3C120150B7S 1200V SiC Cascode UnitedSiC

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