UF3C120150B7S Datasheet - UnitedSiC

1200V SiC Cascode

UF3C120150B7S Features

* w On-resistance RDS(on): 150mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 67nC w Low body diode VFSD: 1.46V w Low gate charge: QG = 25.7nC w Threshold voltage VG(th): 4.4V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin sou

UF3C120150B7S General Description

1 7 Tab G (1) KS (2) D (Tab) S (3-7) Part Number UF3C120150B7S Package D2PAK-7L Marking UF3C120150B7S This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’.

UF3C120150B7S Datasheet (851.38 KB)

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UF3C120150B7S

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UnitedSiC

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851.38 KB

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1200v sic cascode.

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UF3C120150B7S 1200V SiC Cascode UnitedSiC

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UF3C120150B7S Features

UF3C120150B7S General Description

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