* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Typical
UF3C065030T3S Datasheet (498.48 KB)
UF3C065030T3S
UnitedSiC
498.48 KB
Mosfet.
DATASHEET
UF3C065030T3S
CASE
CASE D (2)
G (1) 1 23
S (3)
Part Number UF3C065030T3S
Package TO-220-3L
Marking UF3C065030T3S
650V-27mW SiC Casco.
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