UF3C065030T3S MOSFET

UnitedSiC

Description

DATASHEET UF3C065030T3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UF3C065030T3S Package TO-220-3L Marking UF3C065030T3S 650V-27mW SiC Casco.
United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gat.

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Datasheet Specifications

Part number: UF3C065030T3S
Manufacturer: UnitedSiC
File Size: 498.48 KB
Datasheet: UF3C065030T3S-UnitedSiC.pdf
Description: MOSFET

Features

* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Typical

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065030T3S Rev. C, June 2019 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single

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UF3C065030T3S MOSFET UnitedSiC

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