UF3C065040B3 Datasheet - onsemi

UF3C065040B3, 650V SiC Cascode JFET

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Cascode JFET * EliteSiC, Power N-Channel, D2PAK-3, 650 V, 42 mohm UF3C065040B3 TAB 12 3 D2PA.
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

Features

* Typical On-resistance RDS(on),typ of 42 mW
* Maximum Operating Temperature of 175°C
* Excellent Reverse Recovery
* Low Gate Charge
* Low Intrinsic Capacitance
* ESD Protected, HBM Class 2
* Very Low Switching Losses (Required RC-snubber Loss

Applications

* EV Charging
* PV Inverters
* Switch Mode Power Supplies
* Power Factor Correction Modules
* Motor Drives
* Induction Heating MARKING DIAGRAM UF3C065040B3 AYYWW ZZZ UF3C065040B3 = Specific Device Number A = Assembly Location YY = Year WW = Wor

UF3C065040B3-onsemi.pdf