UF3C065040B3 - 650V SiC Cascode JFET
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE
UF3C065040B3 Features
* Typical On-resistance RDS(on),typ of 42 mW
* Maximum Operating Temperature of 175°C
* Excellent Reverse Recovery
* Low Gate Charge
* Low Intrinsic Capacitance
* ESD Protected, HBM Class 2
* Very Low Switching Losses (Required RC-snubber Loss
