UF3C065040B3 650V SiC Cascode JFET

onsemi

UF3C065040B3 Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Cascode JFET * EliteSiC, Power N-Channel, D2PAK-3, 650 V, 42 mohm UF3C065040B3 TAB 12 3 D2PA.
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

UF3C065040B3 Features

* Typical On-resistance RDS(on),typ of 42 mW
* Maximum Operating Temperature of 175°C
* Excellent Reverse Recovery
* Low Gate Charge
* Low Intrinsic Capacitance
* ESD Protected, HBM Class 2
* Very Low Switching Losses (Required RC-snubber Loss

UF3C065040B3 Applications

* EV Charging
* PV Inverters
* Switch Mode Power Supplies
* Power Factor Correction Modules
* Motor Drives
* Induction Heating MARKING DIAGRAM UF3C065040B3 AYYWW ZZZ UF3C065040B3 = Specific Device Number A = Assembly Location YY = Year WW = Wor

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Datasheet Details

Part number: UF3C065040B3
Manufacturer: onsemi
File Size: 310.30 KB
Datasheet: UF3C065040B3-onsemi.pdf
Description: 650V SiC Cascode JFET

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650V SiC Cascode JFET onsemi

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