UF3C065040B3 - 650V SiC Cascode JFET

Product Overview

onsemi

Datasheet Details

Part number	UF3C065040B3
Manufacturer	onsemi
File Size	310.30 KB
Description	650V SiC Cascode JFET
Datasheet	UF3C065040B3 Datasheet
Additional preview pages of the UF3C065040B3 datasheet.

Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.Available in the D2PAK-3 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive l

Features

Typical On-resistance RDS(on),typ of 42 mW.
Maximum Operating Temperature of 175°C.
Excellent Reverse Recovery.
Low Gate Charge.
Low Intrinsic Capacitance.
ESD Protected, HBM Class 2.
Very Low Switching Losses (Required RC-snubber Loss Negligible under Typical Operating Conditions).
This Device is Halogen Free and RoHS Compliant with Exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: May 3, 2025 |