UF3C065040B3 Datasheet - onsemi

650V SiC Cascode JFET

UF3C065040B3 Features

* Typical On-resistance RDS(on),typ of 42 mW

* Maximum Operating Temperature of 175°C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected, HBM Class 2

* Very Low Switching Losses (Required RC-snubber Loss

UF3C065040B3 General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C065040B3 Datasheet (310.30 KB)

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Datasheet Details

Part number:

UF3C065040B3

Manufacturer:

onsemi

File Size:

310.30 KB

Description:

650v sic cascode jfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-3, 650 V, 42 mohm UF3C065040B3 TAB 12 3 D2PA.

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UF3C065040B3 650V SiC Cascode JFET onsemi

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UF3C065040B3 Features

UF3C065040B3 General Description

Datasheet Details

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