UF3C120400B7S

SiC Cascode JFET

onsemi

UF3C120400B7S Features

* On-resistance RDS(on): 410 mW (Typ)

* Operating Temperature: 175 °C (Max)

* Excellent Reverse Recovery: Qrr = 51 nC

* Low Body Diode VFSD: 1.5 V

* Low Gate Charge: QG = 22.5 nC

* Low Intrinsic Capacitance

* ESD Protected: HBM Class 2 and CDM

UF3C120400B7S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C120400B7S Datasheet (451.79 KB)

UF3C120400B7S Datasheet Preview — Preview of UF3C120400B7S PDF

Datasheet Details

Part number:

UF3C120400B7S

Manufacturer:

onsemi

File Size:

451.79 KB

Description:

Sic cascode jfet.

📁 Related Datasheet

UF3C120040K3S MOSFET (UnitedSiC)

UF3C120040K3S SiC Cascode JFET (onsemi)

UF3C120040K4S SiC Cascode (UnitedSiC)

UF3C120080K3S SiC Cascode JFET (ON Semiconductor)

UF3C120080K3S SiC MOSFET (UnitedSiC)

UF3C120080K4S high performance F3 SiC fast JFET (UnitedSiC)

UF3C120150B7S 1200V SiC Cascode (UnitedSiC)

UF3C120150K4S SiC Cascode JFET (ON Semiconductor)

UF3C120150K4S MOSFET (UnitedSiC)

UF3C170400B7S SiC Cascode JFET (ON Semiconductor)

TAGS

UF3C120400B7S SiC Cascode JFET onsemi

Image Gallery

UF3C120400B7S Features

UF3C120400B7S General Description

Datasheet Details

File Size:

Description:

UF3C120400B7S Distributor