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UF3C120400B7S SiC Cascode JFET

UF3C120400B7S Description

Silicon Carbide (SiC) Cascode JFET * EliteSiC, Power N-Channel, TO-263-7, 1200 V, 410 mohm UF3C120400B7S .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

UF3C120400B7S Features

* On-resistance RDS(on): 410 mW (Typ)
* Operating Temperature: 175 °C (Max)
* Excellent Reverse Recovery: Qrr = 51 nC
* Low Body Diode VFSD: 1.5 V
* Low Gate Charge: QG = 22.5 nC
* Low Intrinsic Capacitance
* ESD Protected: HBM Class 2 and CDM

UF3C120400B7S Applications

* Switching Power Supplies
* Auxiliary Power Supplies
* Load Switches DATA SHEET www. onsemi. com TO-263-7 CASE 418BA MARKING DIAGRAM UF3C120400B7S AYYWW ZZZ UF3C120400B7S = Specific Device Code A = Assembly Location YY = Year WW = Work Week ZZZ = Lot ID PIN CONNECT

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Datasheet Details

Part number
UF3C120400B7S
Manufacturer
onsemi
File Size
451.79 KB
Datasheet
UF3C120400B7S-onsemi.pdf
Description
SiC Cascode JFET

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