UF3C120400B7S Datasheet - onsemi

UF3C120400B7S, SiC Cascode JFET

Silicon Carbide (SiC) Cascode JFET * EliteSiC, Power N-Channel, TO-263-7, 1200 V, 410 mohm UF3C120400B7S Description This SiC FET device is ba

Features

* On-resistance RDS(on): 410 mW (Typ)
* Operating Temperature: 175 °C (Max)
* Excellent Reverse Recovery: Qrr = 51 nC
* Low Body Diode VFSD: 1.5 V
* Low Gate Charge: QG = 22.5 nC
* Low Intrinsic Capacitance
* ESD Protected: HBM Class 2 and CDM

Applications

* Switching Power Supplies
* Auxiliary Power Supplies
* Load Switches DATA SHEET www.
onsemi.
com TO-263-7 CASE 418BA MARKING DIAGRAM UF3C120400B7S AYYWW ZZZ UF3C120400B7S = Specific Device Code A = Assembly Location YY = Year WW = Work Week ZZZ = Lot ID PIN CONNECT

UF3C120400B7S-onsemi.pdf