UF3C120400B7S Datasheet (onsemi)

UF3C120400B7S, SiC Cascode JFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE

UF3C120400B7S Features

* On-resistance RDS(on): 410 mW (Typ)

* Operating Temperature: 175 °C (Max)

* Excellent Reverse Recovery: Qrr = 51 nC

* Low Body Diode VFSD: 1.5 V

* Low Gate Charge: QG = 22.5 nC

* Low Intrinsic Capacitance

* ESD Protected: HBM Class 2 and CDM