UF3SC065030B7S SiC Cascode JFET

onsemi

Description

Silicon Carbide (SiC) Cascode JFET * EliteSiC, Power N-Channel, TO-263-7, 650 V, 27 mohm UF3SC065030B7S .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

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Datasheet Specifications

Part number: UF3SC065030B7S
Manufacturer: onsemi
File Size: 490.52 KB
Datasheet: UF3SC065030B7S-onsemi.pdf
Description: SiC Cascode JFET

Features

* On-resistance RDS(on): 27 mW (Typ)
* Operating Temperature: 175 °C (Max)
* Excellent Reverse Recovery: Qrr = 425 nC
* Low Body Diode VFSD: 1.3 V
* Low Gate Charge: QG = 43 nC
* Threshold Voltage VG(th): 5 V (Typ) Allowing 0 to 15 V Drive
* Pa

Applications

* Any controlled environment such as:
* Telecom and Server Power
* Industrial Power Supplies
* Power Factor Correction Modules
* Motor Drives
* Induction Heating DATA SHEET www. onsemi. com TO-263-7 CASE 418BA MARKING DIAGRAM UF3SC065030B7S AYYWW ZZZ UF3SC06503

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📁 Related Datasheet

UF3SC065030D8S UF3SC065007K4S UF3SC065040B7S UF3SC065040D8S UF3SC120009K4S UF3SC120016K3S

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UF3SC065030B7S SiC Cascode JFET onsemi

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