UF3SC065030B7S Datasheet - onsemi

UF3SC065030B7S SiC Cascode JFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3SC065030B7S Features

* On-resistance RDS(on): 27 mW (Typ)

* Operating Temperature: 175 °C (Max)

* Excellent Reverse Recovery: Qrr = 425 nC

* Low Body Diode VFSD: 1.3 V

* Low Gate Charge: QG = 43 nC

* Threshold Voltage VG(th): 5 V (Typ) Allowing 0 to 15 V Drive

* Pa

UF3SC065030B7S-onsemi.pdf

UF3SC065030B7S Datasheet Preview — Preview of UF3SC065030B7S PDF

Datasheet Details

Part number:

UF3SC065030B7S

Manufacturer:

onsemi

File Size:

490.52 KB

Description:

Sic cascode jfet.

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