Part number:
UF3SC065030B7S
Manufacturer:
onsemi
File Size:
490.52 KB
Description:
Sic cascode jfet.
* On-resistance RDS(on): 27 mW (Typ)
* Operating Temperature: 175 °C (Max)
* Excellent Reverse Recovery: Qrr = 425 nC
* Low Body Diode VFSD: 1.3 V
* Low Gate Charge: QG = 43 nC
* Threshold Voltage VG(th): 5 V (Typ) Allowing 0 to 15 V Drive
* Pa
UF3SC065030B7S Datasheet (490.52 KB)
UF3SC065030B7S
onsemi
490.52 KB
Sic cascode jfet.
📁 Related Datasheet
UF3SC065030D8S - MOSFET
(UnitedSiC)
650V-34mW SiC FET
DATASHEET
UF3SC065030D8S
1 G (1)
4 32 1 KS (2)
D (TAB)
S (3,4)
Rev. B, January 2020
Description
This SiC FET device is based on .
UF3SC065007K4S - SiC FET
(UnitedSiC)
650V-6.7mW SiC FET
DATASHEET
UF3SC065007K4S
CASE
CASE D (1)
Rev. B, December 2019
Description
This SiC FET device is based on a unique ‘cascode’ c.
UF3SC065040B7S - 650V SiC Cascode JFET
(UnitedSiC)
Description
United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only .
UF3SC065040D8S - MOSFET
(UnitedSiC)
650V-45mW SiC FET
DATASHEET
UF3SC065040D8S
D (TAB)
Rev. B, January 2020
Description
This SiC FET device is based on a unique ‘cascode’ circuit confi.
UF3SC120009K4S - SiC FET
(UnitedSiC)
1200V-8.6mW SiC FET
DATASHEET
UF3SC120009K4S
CASE
CASE D (1)
Rev. B, December 2019
Description
This SiC FET device is based on a unique ‘cascode’ .
UF3SC120009K4S - SiC Cascode JFET
(onsemi)
.
UF3SC120016K3S - MOSFET
(UnitedSiC)
DATASHEET
UF3SC120016K3S
CASE
CASE D (2)
G (1) 1 23
S (3)
1200V-16mW SiC FET
Rev. B, December 2019
Description
This SiC FET device is based on .
UF300 - 3.0 AMP HIGH EFFICIENCY RECTIFIERS
(Bytes)
UF300 THRU UF3010
o
3.0 AMP HIGH EFFICIENCY RECTIFIERS
FEATURES
* Low forward voltage drop * High current capability * High reliability * High surg.