UF3SC065030B7S - SiC Cascode JFET

onsemi

UF3SC065030B7S Datasheet Preview — Preview of UF3SC065030B7S PDF

Datasheet Details

Part number	UF3SC065030B7S
Manufacturer	onsemi
File Size	490.52 KB
Description	SiC Cascode JFET
Datasheet	UF3SC065030B7S-onsemi.pdf

UF3SC065030B7S Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.Available in the TO-263-7 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive

Features

On-resistance RDS(on): 27 mW (Typ).
Operating Temperature: 175 °C (Max).
Excellent Reverse Recovery: Qrr = 425 nC.
Low Body Diode VFSD: 1.3 V.
Low Gate Charge: QG = 43 nC.
Threshold Voltage VG(th): 5 V (Typ) Allowing 0 to 15 V Drive.
Package Creepage and Clearance Distance > 6.1 mm.
Kelvin Source Pin for Optimized Switching Performance.
ESD Protected, HBM Class 2.
This Device is Pb-Free, Halogen Free and i.

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Published: Apr 26, 2025 |