UF3SC065030B7S - SiC Cascode JFET
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE
UF3SC065030B7S Features
* On-resistance RDS(on): 27 mW (Typ)
* Operating Temperature: 175 °C (Max)
* Excellent Reverse Recovery: Qrr = 425 nC
* Low Body Diode VFSD: 1.3 V
* Low Gate Charge: QG = 43 nC
* Threshold Voltage VG(th): 5 V (Typ) Allowing 0 to 15 V Drive
* Pa
