Datasheet4U Logo Datasheet4U.com

UF3SC065030B7S

SiC Cascode JFET

UF3SC065030B7S Features

* On-resistance RDS(on): 27 mW (Typ)

* Operating Temperature: 175 °C (Max)

* Excellent Reverse Recovery: Qrr = 425 nC

* Low Body Diode VFSD: 1.3 V

* Low Gate Charge: QG = 43 nC

* Threshold Voltage VG(th): 5 V (Typ) Allowing 0 to 15 V Drive

* Pa

UF3SC065030B7S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3SC065030B7S Datasheet (490.52 KB)

Preview of UF3SC065030B7S PDF

Datasheet Details

Part number:

UF3SC065030B7S

Manufacturer:

onsemi

File Size:

490.52 KB

Description:

Sic cascode jfet.

📁 Related Datasheet

UF3SC065030D8S - MOSFET (UnitedSiC)
650V-34mW SiC FET DATASHEET UF3SC065030D8S 1 G (1) 4 32 1 KS (2) D (TAB) S (3,4) Rev. B, January 2020 Description This SiC FET device is based on .

UF3SC065007K4S - SiC FET (UnitedSiC)
650V-6.7mW SiC FET DATASHEET UF3SC065007K4S CASE CASE D (1) Rev. B, December 2019 Description This SiC FET device is based on a unique ‘cascode’ c.

UF3SC065040B7S - 650V SiC Cascode JFET (UnitedSiC)
Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only .

UF3SC065040D8S - MOSFET (UnitedSiC)
650V-45mW SiC FET DATASHEET UF3SC065040D8S D (TAB) Rev. B, January 2020 Description This SiC FET device is based on a unique ‘cascode’ circuit confi.

UF3SC120009K4S - SiC FET (UnitedSiC)
1200V-8.6mW SiC FET DATASHEET UF3SC120009K4S CASE CASE D (1) Rev. B, December 2019 Description This SiC FET device is based on a unique ‘cascode’ .

UF3SC120009K4S - SiC Cascode JFET (onsemi)
.

UF3SC120016K3S - MOSFET (UnitedSiC)
DATASHEET UF3SC120016K3S CASE CASE D (2) G (1) 1 23 S (3) 1200V-16mW SiC FET Rev. B, December 2019 Description This SiC FET device is based on .

UF300 - 3.0 AMP HIGH EFFICIENCY RECTIFIERS (Bytes)
UF300 THRU UF3010 o 3.0 AMP HIGH EFFICIENCY RECTIFIERS FEATURES * Low forward voltage drop * High current capability * High reliability * High surg.

TAGS

UF3SC065030B7S SiC Cascode JFET onsemi

Image Gallery

UF3SC065030B7S Datasheet Preview Page 2 UF3SC065030B7S Datasheet Preview Page 3

UF3SC065030B7S Distributor