UF3SC065040B7S - 650V SiC Cascode JFET
United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device o
UF3SC065040B7S Features
* w Typical on-resistance RDS(on),typ of 42mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Part Number UF3SC065040B7S Package D2PAK-7L Marking UF3SC065040B7S Typical Applications w EV charging w PV
