UF3SC065040B7S Datasheet - UnitedSiC

UF3SC065040B7S 650V SiC Cascode JFET

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device o.

UF3SC065040B7S Features

* w Typical on-resistance RDS(on),typ of 42mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Part Number UF3SC065040B7S Package D2PAK-7L Marking UF3SC065040B7S Typical Applications w EV charging w PV

UF3SC065040B7S-UnitedSiC.pdf