UF3SC065040D8S MOSFET

UnitedSiC

Description

650V-45mW SiC FET DATASHEET UF3SC065040D8S D (TAB) Rev.B, January 2020 .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

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Datasheet Specifications

Part number: UF3SC065040D8S
Manufacturer: UnitedSiC
File Size: 439.81 KB
Datasheet: UF3SC065040D8S-UnitedSiC.pdf
Description: MOSFET

Features

* 1 G (1) 4 32 1 KS (2) S (3,4) w Typical on-resistance RDS(on),typ of 45mW w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w DFN8X8-4L package for faster switching, clean gate waveforms Typical applic

Applications

* Part Number UF3SC065040D8S Package DFN8X8-4L Marking UF3SC065040D8S w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3SC065040D8S Rev. B, January 2020 1 Maximum Ratings Parameter Drain-source voltage G

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UF3SC065040D8S MOSFET UnitedSiC

UnitedSiC UF3SC065040D8S-like datasheet