UF3SC065040D8S Datasheet - UnitedSiC

UF3SC065040D8S MOSFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3SC065040D8S Features

* 1 G (1) 4 32 1 KS (2) S (3,4) w Typical on-resistance RDS(on),typ of 45mW w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w DFN8X8-4L package for faster switching, clean gate waveforms Typical applic

UF3SC065040D8S-UnitedSiC.pdf