UF3C065030B3 - MOSFET

Product Overview

UnitedSiC

Datasheet Details

Part number	UF3C065030B3
Manufacturer	UnitedSiC
File Size	533.86 KB
Description	MOSFET
Datasheet	UF3C065030B3 Datasheet
Additional preview pages of the UF3C065030B3 datasheet.

Product details

Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Part Number UF3C065030B3 Package D2PAK-3L Marking UF3C065030B3 Typical.

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Published: Apr 15, 2020 |