UF3C065030B3 Datasheet - UnitedSiC

UF3C065030B3, MOSFET

DATASHEET UF3C065030B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-27mW SiC Cascode Rev.A, March 2019 .
United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gat.

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Datasheet Details

Part number:

UF3C065030B3

Manufacturer:

UnitedSiC

File Size:

533.86 KB

Description:

MOSFET

Features

* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Part Nu

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065030B3 Rev. A, March 2019 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single

UF3C065030B3 Distributors

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UF3C065030B3 MOSFET UnitedSiC

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