UF3C065030B3 MOSFET

UnitedSiC

Description

DATASHEET UF3C065030B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-27mW SiC Cascode Rev.A, March 2019 .
United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gat.

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Datasheet Specifications

Part number: UF3C065030B3
Manufacturer: UnitedSiC
File Size: 533.86 KB
Datasheet: UF3C065030B3-UnitedSiC.pdf
Description: MOSFET

Features

* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Part Nu

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065030B3 Rev. A, March 2019 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single

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UF3C065030B3 MOSFET UnitedSiC

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