Description
Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 35 mohm UF3C120040K3S .
This SiC FET device is based on a unique ‘cascode’ circuit
configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.
Features
* Typical On-resistance RDS(on),typ of 35 mW
* Maximum Operating Temperature of 175 C
* Excellent Reverse Recovery
* Low Gate Charge
* Low Intrinsic Capacitance
* ESD Protected, HBM Class 2
* Very Low Switching Losses (required RC-snubber loss negligible
under typical op
Applications
* EV Charging
* PV Inverters
* Switch Mode Power Supplies
* Power Factor Correction Modules
* Motor Drives
* Induction Heating
DATA SHEET www. onsemi. com
1 23 TO247-3
CASE 340AK
MARKING DIAGRAM
xxxxxxxxx AYYWWZZZ
xxxxxxxxx = Specific Device Number
A
= Assembly Location
Y