UF3C065030K3S MOSFET

UnitedSiC

Description

27mW - 650V SiC Cascode | UF3C065030K3S Datasheet .
United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gat.

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Datasheet Specifications

Part number: UF3C065030K3S
Manufacturer: UnitedSiC
File Size: 547.74 KB
Datasheet: UF3C065030K3S-UnitedSiC.pdf
Description: MOSFET

Features

* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) Ty

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maxi

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UF3C065030K3S MOSFET UnitedSiC

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