Datasheet4U Logo Datasheet4U.com

UF3C065030K3S Datasheet - UnitedSiC

UF3C065030K3S - MOSFET

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device o

UF3C065030K3S Features

* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) Ty

UF3C065030K3S-UnitedSiC.pdf

Preview of UF3C065030K3S PDF
UF3C065030K3S Datasheet Preview Page 2 UF3C065030K3S Datasheet Preview Page 3

Datasheet Details

Part number:

UF3C065030K3S

Manufacturer:

UnitedSiC

File Size:

547.74 KB

Description:

Mosfet.

📁 Related Datasheet

📌 All Tags