UF3C065080B7S SiC FET

qorvo

Description

650V-85mW SiC FET DATASHEET UF3C065080B7S Tab 1 7 G (1) KS (2) D (Tab) S (3-7) Rev.B, May 2023 .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

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Datasheet Specifications

Part number: UF3C065080B7S
Manufacturer: qorvo
File Size: 724.76 KB
Datasheet: UF3C065080B7S-qorvo.pdf
Description: SiC FET

Features

* w On-resistance RDS(on): 85mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 69nC w Low body diode VFSD: 1.54V w Low gate charge: QG = 23nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin source

Applications

* Any controlled environment such as w Telecom and Server Power w Industrial power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065080B7S Rev. B, May 2023 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current

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UF3C065080B7S SiC FET qorvo

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