UF3C065080B7S - SiC FET

qorvo

UF3C065080B7S Datasheet Preview — Preview of UF3C065080B7S PDF

Datasheet Details

Part number	UF3C065080B7S
Manufacturer	qorvo
File Size	724.76 KB
Description	SiC FET
Datasheet	UF3C065080B7S-qorvo.pdf

UF3C065080B7S Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

w On-resistance RDS(on): 85mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 69nC w Low body diode VFSD: 1.54V w Low gate charge: QG = 23nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin source pin for optimized switching performance w ESD protected, HBM class 2 Part Number UF3C065080B7S Package D2PAK-7L Marking UF3C065080B7S Typical.

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Published: Dec 5, 2023 |