Datasheet4U Logo Datasheet4U.com

UF3C065080B7S

SiC FET

UF3C065080B7S Features

* w On-resistance RDS(on): 85mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 69nC w Low body diode VFSD: 1.54V w Low gate charge: QG = 23nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin source

UF3C065080B7S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C065080B7S Datasheet (724.76 KB)

Preview of UF3C065080B7S PDF

Datasheet Details

Part number:

UF3C065080B7S

Manufacturer:

qorvo

File Size:

724.76 KB

Description:

Sic fet.

📁 Related Datasheet

UF3C065080B3 - MOSFET (UnitedSiC)
DATASHEET UF3C065080B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-80mW SiC FET Rev. A, January 2020 Description This SiC FET device is based on a uniq.

UF3C065080K3S - SiC Cascode JFET (ON Semiconductor)
Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247-3, 650 V, 80 mohm UF3C065080K3S Description This SiC FET device is based on a un.

UF3C065080T3S - MOSFET (UnitedSiC)
DATASHEET UF3C065080T3S CASE CASE D (2) 650V-80mW SiC FET Rev. B, December 2019 Description This SiC FET device is based on a unique ‘cascode’ circ.

UF3C065030B3 - MOSFET (UnitedSiC)
DATASHEET UF3C065030B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-27mW SiC Cascode Rev. A, March 2019 Description United Silicon Carbide's cascode produ.

UF3C065030B3 - SiC Cascode JFET (ON Semiconductor)
.

UF3C065030K3S - MOSFET (UnitedSiC)
27mW - 650V SiC Cascode | UF3C065030K3S Datasheet Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs w.

UF3C065030K3S - SiC Cascode JFET (ON Semiconductor)
Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 27 mohm UF3C065030K3S Description This SiC FET device is based on a un.

UF3C065030T3S - MOSFET (UnitedSiC)
DATASHEET UF3C065030T3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UF3C065030T3S Package TO-220-3L Marking UF3C065030T3S 650V-27mW SiC Casco.

TAGS

UF3C065080B7S SiC FET qorvo

Image Gallery

UF3C065080B7S Datasheet Preview Page 2 UF3C065080B7S Datasheet Preview Page 3

UF3C065080B7S Distributor