UF3C065080B3 MOSFET

UnitedSiC

Description

DATASHEET UF3C065080B3 TAB 2 13 G (1) TAB D (2) S (3) 650V-80mW SiC FET Rev.A, January 2020 .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce.

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Datasheet Specifications

Part number: UF3C065080B3
Manufacturer: UnitedSiC
File Size: 489.20 KB
Datasheet: UF3C065080B3-UnitedSiC.pdf
Description: MOSFET

Features

* w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Part

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065080B3 Rev. A, January 2020 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Singl

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UF3C065080B3 MOSFET UnitedSiC

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