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UF3C065080K3S SiC Cascode JFET

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Description

Silicon Carbide (SiC) Cascode JFET * EliteSiC, Power N-Channel, TO247-3, 650 V, 80 mohm UF3C065080K3S .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

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Features

* Typical On-resistance RDS(on),typ of 80 mW
* Maximum Operating Temperature of 175 °C
* Excellent Reverse Recovery
* Low Gate Charge
* Low Intrinsic Capacitance
* ESD Protected, HBM Class 2
* Very Low Switching Losses (Required RC-snubber Loss

Applications

* EV Charging
* PV Inverters
* Switch Mode Power Supplies
* Power Factor Correction Modules
* Motor Drives
* Induction Heating DATA SHEET www. onsemi. com TO247-3 15.90x20.96x5.03, 5.44P CASE 340AK MARKING DIAGRAM UF3C065080K3S AYWW ZZZ UF3C065080K3S

UF3C065080K3S Distributors

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