UF3C120080K3S Datasheet - ON Semiconductor

UF3C120080K3S SiC Cascode JFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C120080K3S Features

* Typical On-resistance RDS(on),typ of 80 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected, HBM Class 2

* Very Low Switching Losses (required RC-snubber loss negligible under typical op

UF3C120080K3S-ONSemiconductor.pdf