Part number:
UF3C120080K3S
Manufacturer:
File Size:
405.52 KB
Description:
Sic cascode jfet.
UF3C120080K3S-ONSemiconductor.pdf
Datasheet Details
Part number:
UF3C120080K3S
Manufacturer:
File Size:
405.52 KB
Description:
Sic cascode jfet.
UF3C120080K3S, SiC Cascode JFET
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE
UF3C120080K3S Features
* Typical On-resistance RDS(on),typ of 80 mW
* Maximum Operating Temperature of 175 C
* Excellent Reverse Recovery
* Low Gate Charge
* Low Intrinsic Capacitance
* ESD Protected, HBM Class 2
* Very Low Switching Losses (required RC-snubber loss negligible under typical op
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