Datasheet4U Logo Datasheet4U.com

UF3C120080K3S Datasheet - ON Semiconductor

UF3C120080K3S SiC Cascode JFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C120080K3S Features

* Typical On-resistance RDS(on),typ of 80 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected, HBM Class 2

* Very Low Switching Losses (required RC-snubber loss negligible under typical op

UF3C120080K3S Datasheet (405.52 KB)

Preview of UF3C120080K3S PDF
UF3C120080K3S Datasheet Preview Page 2 UF3C120080K3S Datasheet Preview Page 3

Datasheet Details

Part number:

UF3C120080K3S

Manufacturer:

ON Semiconductor ↗

File Size:

405.52 KB

Description:

Sic cascode jfet.

📁 Related Datasheet

UF3C120080K3S SiC MOSFET (UnitedSiC)

UF3C120080K4S high performance F3 SiC fast JFET (UnitedSiC)

UF3C120040K3S MOSFET (UnitedSiC)

UF3C120040K3S SiC Cascode JFET (onsemi)

UF3C120040K4S SiC Cascode (UnitedSiC)

UF3C120150B7S 1200V SiC Cascode (UnitedSiC)

UF3C120150K4S SiC Cascode JFET (ON Semiconductor)

UF3C120150K4S MOSFET (UnitedSiC)

TAGS

UF3C120080K3S SiC Cascode JFET ON Semiconductor

UF3C120080K3S Distributor