UF3C120080K3S - SiC Cascode JFET

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ON Semiconductor

Datasheet Details

Part number	UF3C120080K3S
Manufacturer	ON Semiconductor
File Size	405.52 KB
Description	SiC Cascode JFET
Datasheet	UF3C120080K3S Datasheet
Additional preview pages of the UF3C120080K3S datasheet.

Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices.Available in the TO247-3 package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive l

Features

Typical On-resistance RDS(on),typ of 80 mW.
Maximum Operating Temperature of 175 C.
Excellent Reverse Recovery.
Low Gate Charge.
Low Intrinsic Capacitance.
ESD Protected, HBM Class 2.
Very Low Switching Losses (required RC-snubber loss negligible under typical operating conditions).
This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Published: Apr 14, 2025 |