UF3C120080K4S - high performance F3 SiC fast JFET
United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery c
UF3C120080K4S Features
* 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applicatio
