UF3C120080K4S - high performance F3 SiC fast JFET

Product Overview

UnitedSiC

Datasheet Details

Part number	UF3C120080K4S
Manufacturer	UnitedSiC
File Size	467.35 KB
Description	high performance F3 SiC fast JFET
Datasheet	UF3C120080K4S Datasheet
Additional preview pages of the UF3C120080K4S datasheet.

Product details

Description

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical.

📁 Similar Datasheet

UF3C120080K3S - SiC Cascode JFET (ON Semiconductor)
UF3C120150K4S - SiC Cascode JFET (ON Semiconductor)
UF3C120400B7S - SiC Cascode JFET (onsemi)
UF3C170400B7S - SiC Cascode JFET (ON Semiconductor)
UF3C170400K3S - SiC Cascode JFET (onsemi)
UF3C065040B3 - 650V SiC Cascode JFET (onsemi)
UF3C065040K3S - SiC Cascode JFET (ON Semiconductor)
UF3C065080B7S - SiC FET (qorvo)

Other Datasheets by UnitedSiC

UF3C120040K3S - MOSFET
UF3C120040K4S - SiC Cascode
UF3C120150B7S - 1200V SiC Cascode
UF3C065030B3 - MOSFET
UF3C065030K3S - MOSFET
UF3C065030T3S - MOSFET

Published: Nov 20, 2024 |