UF3C120080K4S high performance F3 SiC fast JFET

UnitedSiC

Description

1200V-80mW SiC Cascode DATASHEET UF3C120080K4S CASE CASE D (1) Rev.A, January 2019 .
United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standar.

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Datasheet Specifications

Part number: UF3C120080K4S
Manufacturer: UnitedSiC
File Size: 467.35 KB
Datasheet: UF3C120080K4S-UnitedSiC.pdf
Description: high performance F3 SiC fast JFET

Features

* 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applicatio

Applications

* Part Number UF3C120080K4S Package TO-247-4L Marking UF3C120080K4S w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C120080K4S Rev. A, January 2019 1 Maximum Ratings Parameter Drain-source voltage Gate

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UF3C120080K4S high performance SiC fast JFET UnitedSiC

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