UF3C120080K4S Datasheet - UnitedSiC

UF3C120080K4S high performance F3 SiC fast JFET

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery c.

UF3C120080K4S Features

* 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applicatio

UF3C120080K4S-UnitedSiC.pdf