UF3C120080K4S

high performance F3 SiC fast JFET

UnitedSiC

UF3C120080K4S Features

* 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applicatio

UF3C120080K4S General Description

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery c.

UF3C120080K4S Datasheet (467.35 KB)

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UF3C120080K4S

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UnitedSiC

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467.35 KB

Description:

High performance f3 sic fast jfet.

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UF3C120080K4S high performance SiC fast JFET UnitedSiC

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UF3C120080K4S Features

UF3C120080K4S General Description

Datasheet Details

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