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UF3C120040K3S Datasheet - UnitedSiC

UF3C120040K3S-UnitedSiC.pdf

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Datasheet Details

Part number:

UF3C120040K3S

Manufacturer:

UnitedSiC

File Size:

548.90 KB

Description:

Mosfet.

UF3C120040K3S, MOSFET

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device o

UF3C120040K3S Features

* w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) Ty

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