UF3C065040K3S Datasheet - ON Semiconductor

UF3C065040K3S SiC Cascode JFET

onsemi’s cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratin.

UF3C065040K3S Features

* Typical On-resistance RDS(on),typ of 42 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected, HBM Class 2

* Very Low Switching Losses (required RC-snubber loss negligible under typical op

UF3C065040K3S-ONSemiconductor.pdf