UF3C065040K3S - SiC Cascode JFET

Description

SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

Typical On-resistance RDS(on),typ of 42 mW.
Maximum Operating Temperature of 175 C.
Excellent Reverse Recovery.
Low Gate Charge.
Low Intrinsic Capacitance.
ESD Protected, HBM Class 2.
Very Low Switching Losses (required RC-snubber loss negligible under typical operating conditions).
This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

onsemi

📥 Download Datasheet

Datasheet Details

Part number	UF3C065040K3S
Manufacturer	onsemi
File Size	420.13 KB
Description	SiC Cascode JFET
Datasheet	UF3C065040K3S Datasheet
Additional preview pages of the UF3C065040K3S datasheet.

📁 Similar Datasheet

UF3C065040K3S - MOSFET (UnitedSiC)
UF3C065040K4S - 650V SiC Cascode (UnitedSiC)
UF3C065040B3 - 650V SiC Cascode JFET (onsemi)
UF3C065030B3 - MOSFET (UnitedSiC)
UF3C065030K3S - MOSFET (UnitedSiC)
UF3C065030T3S - MOSFET (UnitedSiC)
UF3C065080B3 - MOSFET (UnitedSiC)
UF3C065080B7S - SiC FET (qorvo)
UF3C065080T3S - MOSFET (UnitedSiC)
UF3C120040K3S - MOSFET (UnitedSiC)

Other Datasheets by ON Semiconductor

UF3C065030B3 - SiC Cascode JFET
UF3C065030K3S - SiC Cascode JFET
UF3C065080K3S - SiC Cascode JFET
UF3C120080K3S - SiC Cascode JFET
UF3C120150K4S - SiC Cascode JFET
UF3C170400B7S - SiC Cascode JFET

Full PDF Text Transcription

Click to expand full text

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 42 mohm UF3C065040K3S Description onsemi’s cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

Published: Apr 14, 2025 |