UF3C065040K3S - SiC Cascode JFET

ON Semiconductor

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Datasheet Details

Part number	UF3C065040K3S
Manufacturer	ON Semiconductor ↗
File Size	420.13 KB
Description	SiC Cascode JFET
Datasheet	UF3C065040K3S-ONSemiconductor.pdf

UF3C065040K3S Product details

Description

onsemi’s cascode products co-package its high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

Features

Typical On-resistance RDS(on),typ of 42 mW.
Maximum Operating Temperature of 175 C.
Excellent Reverse Recovery.
Low Gate Charge.
Low Intrinsic Capacitance.
ESD Protected, HBM Class 2.
Very Low Switching Losses (required RC-snubber loss negligible under typical operating conditions).
This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Published: Apr 14, 2025 |