Description
United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Features
- 1 2 34
G (4) KS (3)
S (2)
w Typical on-resistance RDS(on),typ of 42mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms
Typical.
UF3C065040K4S Datasheet
