UF3C170400B7S SiC Cascode JFET

ON Semiconductor

Description

Silicon Carbide (SiC) Cascode JFET * EliteSiC, Power N-Channel, TO-263-7, 1700 V, 410 mohm UF3C170400B7S .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

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Datasheet Specifications

Part number: UF3C170400B7S
Manufacturer: ON Semiconductor ↗
File Size: 449.26 KB
Datasheet: UF3C170400B7S-ONSemiconductor.pdf
Description: SiC Cascode JFET

Features

* On-resistance RDS(on): 410 mW (Typ)
* Operating Temperature: 175 °C (Max)
* Excellent Reverse Recovery: Qrr = 70 nC
* Low Body Diode VFSD: 1.5 V
* Low Gate Charge: QG = 23.1 nC
* Low Intrinsic Capacitance
* ESD Protected: HBM Class 2 and CDM

Applications

* Switching Power Supplies
* Auxiliary Power Supplies
* Load Switches DATA SHEET www. onsemi. com TO-263-7 CASE 418BA MARKING DIAGRAM UF3C170400B7S AYYWW ZZZ UF3C170400B7S = Specific Device Code A = Assembly Location YY = Year WW = Work Week ZZZ = Lot ID PIN CONNECT

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UF3C170400B7S SiC Cascode JFET ON Semiconductor

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