UF3C170400B7S - SiC Cascode JFET

ON Semiconductor

UF3C170400B7S Datasheet Preview — Preview of UF3C170400B7S PDF

Datasheet Details

Part number	UF3C170400B7S
Manufacturer	ON Semiconductor ↗
File Size	449.26 KB
Description	SiC Cascode JFET
Datasheet	UF3C170400B7S-ONSemiconductor.pdf

UF3C170400B7S Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.Available in the TO-263-7 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive l

Features

On-resistance RDS(on): 410 mW (Typ).
Operating Temperature: 175 °C (Max).
Excellent Reverse Recovery: Qrr = 70 nC.
Low Body Diode VFSD: 1.5 V.
Low Gate Charge: QG = 23.1 nC.
Low Intrinsic Capacitance.
ESD Protected: HBM Class 2 and CDM Class C3.
This Device is Halogen Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection) Typical.

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Published: Apr 14, 2025 |