Part number:
UF3C170400B7S
Manufacturer:
File Size:
449.26 KB
Description:
Sic cascode jfet.
UF3C170400B7S-ONSemiconductor.pdf
Datasheet Details
Part number:
UF3C170400B7S
Manufacturer:
File Size:
449.26 KB
Description:
Sic cascode jfet.
UF3C170400B7S, SiC Cascode JFET
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFET
UF3C170400B7S Features
* On-resistance RDS(on): 410 mW (Typ)
* Operating Temperature: 175 °C (Max)
* Excellent Reverse Recovery: Qrr = 70 nC
* Low Body Diode VFSD: 1.5 V
* Low Gate Charge: QG = 23.1 nC
* Low Intrinsic Capacitance
* ESD Protected: HBM Class 2 and CDM
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