UF3SC120009K4S - SiC FET

UnitedSiC

UF3SC120009K4S Datasheet Preview — Preview of UF3SC120009K4S PDF

Datasheet Details

Part number	UF3SC120009K4S
Manufacturer	UnitedSiC
File Size	487.59 KB
Description	SiC FET
Datasheet	UF3SC120009K4S-UnitedSiC.pdf

UF3SC120009K4S Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 8.6mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical.

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Published: Jun 22, 2020 |