UF3SC120009K4S SiC FET

UnitedSiC

Description

1200V-8.6mW SiC FET DATASHEET UF3SC120009K4S CASE CASE D (1) Rev.B, December 2019 .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

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Datasheet Specifications

Part number: UF3SC120009K4S
Manufacturer: UnitedSiC
File Size: 487.59 KB
Datasheet: UF3SC120009K4S-UnitedSiC.pdf
Description: SiC FET

Features

* 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 8.6mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applicat

Applications

* Part Number UF3SC120009K4S Package TO-247-4L Marking UF3SC120009K4S w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3SC120009K4S Rev. B, December 2019 1 Maximum Ratings Parameter Drain-source voltage

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UF3SC120009K4S SiC FET UnitedSiC

UnitedSiC UF3SC120009K4S-like datasheet