UF3SC120009K4S Datasheet - UnitedSiC

UF3SC120009K4S SiC FET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3SC120009K4S Features

* 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 8.6mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applicat

UF3SC120009K4S-UnitedSiC.pdf