UF3SC065030D8S Datasheet - UnitedSiC

UF3SC065030D8S MOSFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3SC065030D8S Features

* w Typical on-resistance RDS(on),typ of 34mW w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w DFN8X8-4L package for faster switching, clean gate waveforms Typical applications Part Number UF3SC065030D8

UF3SC065030D8S-UnitedSiC.pdf