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UF3N170400B7S SiC Normally-on JFET

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Description

DATASHEET UF3N170400B7S Silicon Carbide (SiC) JFET EliteSiC, Power N-Channel, D2PAK-7L, 1700 V, 400 mohm Rev.C, January 2025 .
UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors.

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Datasheet Specifications

Part number
UF3N170400B7S
Manufacturer
UnitedSiC
File Size
795.68 KB
Datasheet
UF3N170400B7S-UnitedSiC.pdf
Description
SiC Normally-on JFET

Features

* w Typical on-resistance RDS(on),typ of 400mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Part Number UF3N170400B7S Package D2PAK-7L Marking UF3N170400B7S Typic

Applications

* w Over Current Protection Circuits w DC-AC Inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3N170400B7S Rev. C, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 2 Pu

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