UF3N090800Z Datasheet - UnitedSiC

UF3N090800Z JFET

United Silicon Carbide, Inc offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal .

UF3N090800Z Features

* w Typical on-resistance RDS(on),typ of 735mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical applications w Over Current Protection Circuits w DC-AC Inverters

UF3N090800Z-UnitedSiC.pdf