124 Datasheet | Specifications & PDF Download

ANHUI DONGKE SEMICONDUCTOR CO., LTD OFF-LINE SWITCH MODE POWER CONTROLLER -DK124 SPECIFICATION 1. DESCRIPTION The DK124 is a secondary side fly-back t

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RC Mid-Range Power Relay--HRW-1 Shenzhen RC Electronics Co., Ltd. HRW-1 Feature 1. Low profile size: 20(L)x16(W)x20(H)mm 2. Switching Capacity: 15A

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SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. FM6124 (：S&CIC1501) 16 LED FM6124 LED IC， 16 。FM6124 “ ”，，。FM6124 ， 。 FM6124 ， PCB 。 ， LED 。

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、 KP212X ⚫ 650V MOSFET ⚫ ◼ (SEL ) ◼ (SEL= GND) ⚫ ±4%、 ⚫ <70mW ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ ： ◼ (SLP) ◼ (OTP) ◼ (OCP) ◼ (LEB) ◼ ◼ VDD ⚫ SOP-7/8、DIP-7

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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C8051F120/1/2/3/4/5/6/7 8K ISP FLASH MCU Family Analog Peripherals - 10 or 12-bit SAR ADC • ± 1 LSB INL • Programmable throughput up to 100 ksps • Up

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Preliminary Datasheet MBI5124 Features 16 Channel Constant Current LED Driver with Ghosting Elimination  16 constant-current output channels  Co

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Data Sheet No. PD60240 revA IRS20124S(PbF) DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION Features • 200V high voltage ratings deliver u

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CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features • Separate independ

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SANYOU RELAYS Relays for advanced technology Miniature Power Relay SRD-Series Contact Capacity Features ● High contact capability： 12A switching c

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® LS1240A ELECTRONIC TWO - TONE RINGER . . . . . LOW CURRENT CONSUMPTION, IN ORDER TO ALLOW THE PARALLEL OPERATION OF 4 DEVICES INTEGRATED RECTIFIE

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features • Separate independ

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www.DataSheet4U.com DTA114EM3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resis

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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