128K-bit Datasheet | Specifications & PDF Download

Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture –

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A62S7308B Series Preliminary 128K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 128K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 0

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M29F010B 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPER

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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RAD Tolerant ACT–RS128K32 High Speed 4 Megabit SRAM Multichip Module Features s Overall configuration as 128K x 32 s Tolerant to 30KRad (Si) s Latch-u

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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® LY62L1024 Rev. 1.2 128K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised Icc De

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Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Byte

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AT29C010A Features • • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram

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NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM October 1998 NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM General Des

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AT27C010/L Features • • • • • • • • • Fast Read Access Time - 45 ns Low Power CMOS Operation 100 µA max. Standby 25 mA max. Active at 5 MHz (AT27C01

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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CAT25C128/256 128K/256K-Bit SPI Serial CMOS E2PROM FEATURES s 5 MHz SPI Compatible s 1.8 to 6.0 Volt Operation s Hardware and Software Protection s Ze

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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AT49(H)BV/(H)LV01 Features • Single Supply Voltage, Range 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time - 55 ns • Internal

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CAT25C128/256 128K/256K-Bit SPI Serial CMOS E2PROM FEATURES s 5 MHz SPI Compatible s 1.8 to 6.0 Volt Operation s Hardware and Software Protection s Ze

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Features • Utilizes the AVR® Enhanced RISC Architecture • 121 Powerful Instructions - Most Single Clock Cycle Execution • 128K bytes of In-System Repr

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