12P10 Datasheet | Specifications & PDF Download

CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315mΩ @VGS = -10V. Super high dense cell design f

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CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design fo

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Topstek Current Transducer TU12P10A..TU12P150A-RC5 Features TU12P10A~150A-RC5 ♦ DC output AC current measurement device ♦ Clamp on split core struc

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CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design fo

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UNISONIC TECHNOLOGIES CO., LTD 12P10 -9.4A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS techno

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FQP12P10 QFET FQP12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F

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Topstek True RMS Current Transducer TU12P5A..TU12P150A-CL420 TU12P 5A~150A-CL420 Features ♦ Highly reliable True RMS current measurement device ♦ Cl

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CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315mΩ @VGS = -10V. Super high dense cell design f

(14 views)

BYT12P/1000A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft

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FQD12P10 / FQU12P10 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistor

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FQD12P10TM_F085 P-Channel MOSFET February 2010 FQD12P10TM_F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power fiel

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Topstek Current Transducer TU12P10A..TU12P150A-RC5 Features TU12P10A~150A-RC5 ♦ DC output AC current measurement device ♦ Clamp on split core struc

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FQD12P10TM-F085 P-Channel MOSFET FQD12P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transi

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BYT12P/1000A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft

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www.vishay.com V12P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0

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UNISONIC TECHNOLOGIES CO., LTD UT12P10 -100V, -12A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT12P10 is a P-channel power MOSFET using UTC’s advanc

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FQB12P10 / FQI12P10 QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistor

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FQPF12P10 QFET FQPF12P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using

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Features n Multiturn / Cermet / Sealed n Available in both top and side adjustment n Units can be pre-adjusted at clockwise, counter-clockwise or stan

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Features n Multiturn / Cermet / Sealed n Available in both top and side adjustment n Units can be pre-adjusted at clockwise, counter-clockwise or stan

(10 views)