13-Inch Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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isc Thyristors INCHANGE Semiconductor BT137S-600E DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability

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Aptina Confidential and Proprietary Preliminary‡ AR0132AT: 1/3-Inch CMOS Digital Image Sensor Features 1/3-Inch CMOS Digital Image Sensor AR0132AT

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min

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isc Triacs INCHANGE Semiconductor BT134-600E FEATURES ·With TO-126P package ·Designed for use in general purpose bidirectional switching and phase c

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isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide

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isc Triacs BT138-800F FEATURES ·With TO-220 package ·Glass passivated triacs in a plastic envelope, Intended for use in general purpose bidirectiona

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isc N-Channel MOSFET Transistor IXTC13N50 ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 400mΩ@VG

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1307 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 350V(Min) ·High DC cur

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vo

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isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)=

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isc N-Channel MOSFET Transistor IXFA130N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vo

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INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification MJE13005D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide

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1.2 MP Smart iToF 1/3.2-inch Stacked BSI Global Shutter Depth Sensor Product Preview AF0130, AF0131 onsemi AF0130 and AF0131 Smart Indirect Time o

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isc Triacs BT131 FEATURES ·Glass passivated,sensitive gate triacs in a plastic envelope ·Intended for use in general purpose bidirectional switching

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Inchange Semiconductor Product Specification www.DataSheet4U.com Silicon NPN Power Transistors 2SD1413 DESCRIPTION ·With TO-220Fa package ·High DC

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isc N-Channel MOSFET Transistor 2SK3813-Z FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-R

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min

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