2SA1302 Silicon PNP Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min). Complement to Type 2.

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Datasheet Specifications

Part number: 2SA1302
Manufacturer: Inchange Semiconductor
File Size: 136.97 KB
Datasheet: 2SA1302_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5

2SA1302 Distributors

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2SA1302 Silicon PNP Power Transistor Inchange Semiconductor

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