2SA1352 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1352 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min). Complement to Type 2SC3416. Minimum Lot-to-Lot variations for robust dev.

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Datasheet Specifications

Part number: 2SA1352
Manufacturer: Inchange Semiconductor
File Size: 213.44 KB
Datasheet: 2SA1352-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.1 A

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2SA1352 Silicon PNP Power Transistor Inchange Semiconductor

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