2SA1303 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min). Good Linearity of hFE. Complement to Type 2SC3284. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SA1303
Manufacturer: Inchange Semiconductor
File Size: 220.79 KB
Datasheet: 2SA1303_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -14 A IB Base Current-C

2SA1303 Distributors

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2SA1303 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1303-like datasheet