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2SA1333 - POWER TRANSISTOR

2SA1333 Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage. Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device performance and reliable.

2SA1333 Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-

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