Datasheet4U Logo Datasheet4U.com

2SA1305 - POWER TRANSISTOR

2SA1305 Description

isc Silicon PNP Power Transistor 2SA1305 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min). Good Linearity of hFE. Complement to Type 2SC3297. Minimum Lot-to-Lot var.

2SA1305 Applications

* Power amplifier applications.
* Car radio and car stereo output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Contin

📥 Download Datasheet

Preview of 2SA1305 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA1300 - TRANSISTOR (Toshiba Semiconductor)
  • 2SA1301 - Silicon PNP Transistor (Toshiba)
  • 2SA1302 - Silicon PNP Transistor (Toshiba)
  • 2SA1303 - Silicon PNP Transistor (Sanken electric)
  • 2SA1304 - TRANSISTOR (Toshiba Semiconductor)
  • 2SA1306 - Silicon PNP Transistor (Toshiba)
  • 2SA1306A - PNP Transistor (INCHANGE)
  • 2SA1306B - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1305-like datasheet