2SA1301 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1301 .
High Power Dissipation. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Complement to Type 2SC3280. Minimum Lot-to-Lot v.

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Datasheet Specifications

Part number: 2SA1301
Manufacturer: Inchange Semiconductor
File Size: 221.01 KB
Datasheet: 2SA1301_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Power amplifier applications
* Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5

2SA1301 Distributors

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2SA1301 Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SA1301-like datasheet