132K Datasheet | Specifications & PDF Download

AT89S4D12 Features • Compatible with MCS-51™ Products • 128K Bytes of In-System Reprogrammable Flash data memory and 4K Bytes of Downloadable Flash Pr

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DHS4E4G132KR2B “#” indicates a package specification code. Last Time Buy Date: 31 Mar 2020 Date of discontinuation: 30 Sep 2020 < List of part numb

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS High ripple snap-ins, 105℃ KLA New Series ・Endurance with ripple current : 3,000 hours at 105℃ ・H

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KP2313X High Performance Primary Side Regulation CV/CC Power Switch With Single Failure Protections FEATURES GENERAL DESCRIPTION  Built-in 800V H

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS High ripple snap-ins, 85℃ RLASeries ・Endurance with ripple current : 3,000 hours at 85℃ ・High ripp

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS High ripple snap-ins, 105℃ KLA New Series ・Endurance with ripple current : 3,000 hours at 105℃ ・H

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS High ripple snap-ins, 85℃ RLASeries ・Endurance with ripple current : 3,000 hours at 85℃ ・High ripp

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS High ripple snap-ins, 105℃ KLA New Series ・Endurance with ripple current : 3,000 hours at 105℃ ・H

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS High ripple snap-ins, 85℃ RLASeries ・Endurance with ripple current : 3,000 hours at 85℃ ・High ripp

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S25FL116K/S25FL132K/S25FL164K 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/ 64-Mbit (8 Mbyte), 3.0 V, SPI Flash Memory This product family has been retired an

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This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA3S132A (MA132A), MA3S132K (MA132K) Silicon epitaxial planar type F

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS High ripple snap-ins, 105℃ KLA New Series ・Endurance with ripple current : 3,000 hours at 105℃ ・H

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S25FL1-K S25FL116K — 16 Mbit (2 Mbyte) S25FL132K — 32 Mbit (4 Mbyte) S25FL164K — 64 Mbit (8 Mbyte) CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peri

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SID11x2K SCALE-iDriver Family Up to 8 A Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Galvanic Isolation Product Highlights Highly Inte

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Document 878-1 Wideband Bias Chokes – 4310LC • Flat bandwidth with high impedance to 6 GHz • Low DCR and excellent current handling • Ideal for us

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MB9A130LB Series 32-bit ARM® Cortex®-M3 based Microcontroller MB9AF131KB/LB, MB9AF132KB/LB Data Sheet (Full Production) Notice to Readers: This docume

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TPD4132K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4132K The TPD4132K is a DC brushless motor driver using high-vo

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Document 878-1 Wideband Bias Chokes – 4310LC • Flat bandwidth with high impedance to 6 GHz • Low DCR and excellent current handling • Ideal for us

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Document 878-1 Wideband Bias Chokes – 4310LC • Flat bandwidth with high impedance to 6 GHz • Low DCR and excellent current handling • Ideal for us

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Switching Diodes MA3S132K Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits I Features • Short reverse recovery time trr •

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