1365 Datasheet | Specifications & PDF Download

13650DE 13 Gbps Differential Encoder Data Sheet Inphi 13650DE Applications • High-speed (up to 13 Gbps) optical duobinary systems • High-speed (up t

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STK1365 USB 2.0 DSC/DV Camera controller STK13u65se onlyProduct Data Sheet OVersion 1.0 DNovember 27, 2009 MTaipei Office For10F, No. 1, Alley 30, Lan

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A1365 Low-Noise, High-Precision, Programmable Linear Hall-Effect Sensor IC with High-Bandwidth (120 kHz) Analog Output and Integrated Fault Comparator

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Preliminary Data Sheet BD2400U520-1365 Ultra Low Profile 1365 Balun 50Ω to 200Ω Balanced Key Patents Lead Microwave Tech Features: ● 2300~2500 MHz ●

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2N350A, 2N351 A, 2N376A (continued) OUTPUT CURRENT versus EMITTER·DRIVE VOLTAGE 5.0 II 4.5 I 1I / / '- 2N 7'A~ / J '/ / / / '- 2N 5IA I '// '-2

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Accetek     A       1MT Series High Current Shielded Power Inductor FEATURES Molded Metal Construction with ultra low DCR Magnetically shielde

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Accetek     A       1MT Series High Current Shielded Power Inductor FEATURES Molded Metal Construction with ultra low DCR Magnetically shielde

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Accetek     A       1MT Series High Current Shielded Power Inductor FEATURES Molded Metal Construction with ultra low DCR Magnetically shielde

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2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1365 Switching Power Supply Applications z Low drain−source ON resi

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LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataShe

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SMT Power Inductor HAH1365 Type Features RoHS compliant. Low profile (6.5mm max. height) SMD type. Magnetically shielded, suitable for high density mo

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SMD Type Silicon PNP Epitaxia 2SA1365 SOT-23 Transistors IC Unit: mm Features Low collector to emitter saturation voltage. +0.1 2.4-0.1 +0.1 2.9-0

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R8C/36A Group RENESAS MCU PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. REJ03B0265-0110 Rev.1.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high

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LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high

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IR213(6,62,63,65,66,67,68)(J&S) & PbF Data Sheet No. PD60166 revU IR2136/IR21362/IR21363/IR21365/ IR21366/IR21367/IR21368 (J&S) & (PbF) 3-PHASE BRIDG

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