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K1365 - 2SK1365

K1365 Description

2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSII.5) 2SK1365 Switching Power Supply Applications z Low drain

K1365 Applications

* z Low drain
* source ON resistance : RDS (ON) = 1.5 Ω (typ. ) z High forward transfer admittance : |Yfs| = 4.0 S (typ. ) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char

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2SK1365 Toshiba Semiconductor
Toshiba Semiconductor K1365-like datasheet

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