K1365 Datasheet - Toshiba Semiconductor

K1365, 2SK1365

2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSII.5) 2SK1365 Switching Power Supply Applications z Low drain

datasheet Preview Page 1 from Datasheet4u.com

K1365-ToshibaSemiconductor.pdf

K1365 Datasheet Preview — Preview of K1365 PDF

Datasheet Details

Part number:

K1365

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

392.72 KB

Description:

2SK1365

Applications

* z Low drain
* source ON resistance : RDS (ON) = 1.5 Ω (typ. ) z High forward transfer admittance : |Yfs| = 4.0 S (typ. ) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char

K1365 Distributors

📁 Related Datasheet

K1363 K1300 K1300G K1300S K1300y K1304

📌 All Tags

K1365 2SK1365 Toshiba Semiconductor

Toshiba Semiconductor K1365-like datasheet