K1359 Datasheet - Toshiba Semiconductor

K1359 2SK1359

2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSII ) .5 2SK1359 DC DC Converter and Motor Drive Applications z Low drain source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode www.DataSheet4U.com Unit: mm : RDS (ON) = 3.0 Ω (typ.) : |Yfs| = 2.0 S (typ.) : IDSS = 300 μA (max) (VDS = 800 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain sourc.

K1359_ToshibaSemiconductor.pdf