K1382 Datasheet - Toshiba Semiconductor

K1382, 2SK1382

2SK1382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 *π *MOSIII) 2SK1382 Relay Drive, Motor Drive and DC *DC C.

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K1382-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K1382

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

390.36 KB

Description:

2SK1382

Applications

* Unit: mm z 4-V gate drive z Low drain
* source ON resistance : RDS (ON) = 15 mΩ (typ. ) z High forward transfer admittance : |Yfs| = 47 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

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