K1358 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Dri.

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Datasheet Specifications

Part number: K1358
Manufacturer: Toshiba ↗ Semiconductor
File Size: 568.20 KB
Datasheet: K1358_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ. )
* High Forward Transfer Admittance - Yfs = 4.0S (Typ. )
* Low Leakage Current - IDSS = 300µA (Max. ) @ VDS = 720V
* Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C)

K1358 Distributors

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K1358 Silicon N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor K1358-like datasheet