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K1358 - Silicon N-Channel MOSFET

Toshiba Semiconductor

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Datasheet Details

Part number	K1358
Manufacturer	Toshiba ↗ Semiconductor
File Size	568.20 KB
Description	Silicon N-Channel MOSFET
Datasheet	K1358_ToshibaSemiconductor.pdf

K1358 Product details

Features

Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ. ).
High Forward Transfer Admittance - Yfs = 4.0S (Typ. ).
Low Leakage Current - IDSS = 300µA (Max. ) @ VDS = 720V.
Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C).

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Published: May 3, 2006 |