Datasheet Details
- Part number
- 2SK1365
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 392.72 KB
- Datasheet
- 2SK1365_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
2SK1365 Description
2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSII.5) 2SK1365 Switching Power Supply Applications z Low drain
2SK1365 Applications
* z Low drain
* source ON resistance : RDS (ON) = 1.5 Ω (typ. ) z High forward transfer admittance : |Yfs| = 4.0 S (typ. ) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Char
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