13N50 Datasheet | Specifications & PDF Download

ITA13N50R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 500V Lead Free Package and Finish RDS(ON)(Typ.) 0.4Ω ID 13A Features: ●

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www.DataSheet4U.com FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power fi

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UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancemen

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Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description： CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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FQPF13N50CF — N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features • 13 A, 500 V, RDS(on)

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ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMO

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SVF13N50T/F/PN_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50T/F/PN is an N-channel enhancement mode power MOS field effect trans

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 IXFM 13 N50 VDSS ID (cont) RDS(on) trr = 500 V

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isc N-Channel MOSFET Transistor IXTC13N50 ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 400mΩ@VG

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Power MOSFET ISOPLUS220TM IXTC 13N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS = 500 V

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SEMICONDUCTOR IRF13N50 Series N-Channel Power MOSFET (14A, 500Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF13N50 are N-channe

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MDP13N50 N-channel MOSFET 500V MDP13N50 N-Channel MOSFET 500V, 13.0A, 0.5Ω General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technol

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Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e

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Silicon N-Channel Power MOSFET CS13N50 A8H ○R General Description： VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, i

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Silicon N-Channel Power MOSFET CS13N50F A9R ○R General Description： CS13N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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TSP13N50M/TSF13N50M TSP13N50M/TSF13N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar str

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Feb 2009 PFP13N50/PFF13N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰

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Feb 2009 PFP13N50 / PFF13N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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Silicon N-Channel Power MOSFET CS13N50 A8D ○R General Description： CS13N50 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 IXFM 13 N50 VDSS ID (cont) RDS(on) trr = 500 V

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