Preliminary Data Sheet IXSH15N120A IGBT "S" Seri.
IXYS Corporation
15N120A - IXSH15N120A
Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe.
Fairchild Semiconductor
FGA15N120ANTD - 1200V NPT Trench IGBT
www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem.
IXYS Corporation
IXSH15N120A - IGBT
Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe.
IXYS Corporation
IXSH15N120AU1 - IGBT
IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode S Series - Improved SCSOA Capability C G E Symbol www.DataSheet4U.com IC25 = 30 A VCES = 120.
Fairchild Semiconductor
FGA15N120AN - NPT Igbt
FGA15N120AN IGBT FGA15N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losse.
ON Semiconductor
FGA15N120ANTDTU - IGBT
FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT FGA15N120ANTDTU 1200 V, 15 A NPT Trench IGBT Features • NPT Trench Technology, Positive temperature co.
Fairchild Semiconductor
FGA15N120ANTDTU - IGBT
FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT FGA15N120ANTDTU 1200 V, 15 A NPT Trench IGBT Features • NPT Trench Technology, Positive temperature co.
Huajing Microelectronics
BT15N120ANF - Silicon FS Planar IGBT
Silicon FS Planar IGBT BT15N120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120.
Fairchild Semiconductor
FGA15N120AND - IGBT
www.DataSheet4U.com FGA15N120AND IGBT FGA15N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduc.