16-Mb Datasheet | Specifications & PDF Download

www.datasheet4u.com April 2007 HYB25DC512800B[E/F] HYB25DC512160B[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compliant Products Internet

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Fea

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PF_DB240E1_I RG-DB125/165-240E1FV Three phase rectifier bridge assembly with press-fit diodes HIGLIGHTS -Very low cost -High efficiency -Long term r

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6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High spee

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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Preliminary GS8342T08/09/18/36E-333/300/267*/250/200/167 165-Bump BGA Commercial Temp Industrial Temp Features • Simultaneous Read and Write SigmaCIO™

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.com54 TSOP-II with Pb-Free e(RoHS compliant) w.DataSheRevision 1.2 ww

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SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.com54 TSOP-II with Pb-Free e(RoHS compliant) w.DataSheRevision 1.2 ww

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DA16600MOD Series Ultra-Low-Power Wi-Fi + Bluetooth® LE Combo Module Datasheet General Description The DA16600 series is a highly integrated ultra-l

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DM9161C 10/100 Mbps Fast Ethernet Physical Layer Single Chip Transceiver DAVICOM Semiconductor, Inc. DM9161C 10/100 Mbps Fast Ethernet Physical Layer

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VS-MBR16 PbF Series, VS-MBR16 -N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 16 A FEATURES Base cathode 2 • 150 °C TJ oper

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Sept. 2024 SCB18X128XX0AF 128Mbit DDR OPI Xccela PSRAM EU RoHS Compliant Products Data Sheet Rev. H Data Sheet SCB18X128XX0AF 128Mbit DDR OPI Xccela

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CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit QDR® II SRAM Two-Word Burst Architecture 144-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■

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CY62126ESL MoBL® 1-Mbit (64 K × 16) Static RAM 1-Mbit (64 K × 16) Static RAM Features ■ Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V a

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