160W Datasheet | Specifications & PDF Download

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Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode

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NV25080WF, NV25160WF EEPROM Serial 8/16-Kb SPI - Automotive Grade 1 in Wettable Flank UDFN8 Package Description The NV25080/25160 are EEPROM Serial 8

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Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode

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Data Sheet Customer： Product : Part No.: Issued Date: Small Signal Schottky Diode-Standard B120W / B130W / B140W / B160W / B1100W 11-Jan-11 Edition

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Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral

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Data Sheet Customer： Product : Part No.: Issued Date: Edition : Small Signal Schottky Diode-Standard B120W-F/B130W-F/B140W-F/B160W-F/B1100W-F/B1150W

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Schottky Barrier Rectifier Chip Integration Technology Corporation B120WS-F THRU B1100WS-F 1 Amperes Surface Mount Schottky Barrier Rectifiers VOLTA

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Data Sheet Customer： Product : Part No.: Issued Date: Edition : Small Signal Schottky Diode-Standard B120WS-F/B130WS-F/B140WS-F/B160WS-F/B1100WS-F/B

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B120W THRU B1100W 1A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mounted application in order to optimize board space.

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Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral

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B120W-ST THRU B1200W-ST 1A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mounted application in order to optimize board

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B140WG-SL THRU B1200WG-SL Chip Integration Technology Corporation 1A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mou

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B120W-S THRU B1200W-S 1A Surface Mount Schottky Barrier Rectifiers ■ Features • Low profile surface mounted application in order to optimize board sp

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P/N DWN. FSLC-C160W Y.Tanaka DATA-No. DATE. June/2/2004 LC-FSLC-C160W-0406A 4532 Size www.DataSheet4U.com 1.5-2.0GHz Band Chip Multilayer 90deg.

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P/N DWN. FSLC-C160W-205 Y.Tanaka DATE. Sep./27/2004 DATA-No. 2MT44268 4532 Size www.DataSheet4U.com 1.92-2.17GHz Band Chip Multilayer 90deg. Split

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High power resistor in a aluminium housing RXLG-H-F L2 H±1 5.3±0.2 d H/2 250±10 L1 L Type RXLG-H-F 80W RXLG-H-F 100W RXLG-H-F 150W(160W)

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HRD65T160x 650V Super-junction Power MOSFET Gen Ⅲ Description 650V Super-junction MOSFET Gen Ⅲ Super-junction MOSFET Gen Ⅲ is designed by HR-Micro Se

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TYN160WP-1600T SCR Rev.02 - 27 December 2024 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a TO247 Plu

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