AFT23S160W02SR3 RF Power LDMOS Transistors

NXP

Description

Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev.0, 11/2013 RF Power LDMOS Transistors N *Channel Enhancement

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Datasheet Specifications

Part number: AFT23S160W02SR3
Manufacturer: NXP ↗
File Size: 274.44 KB
Datasheet: AFT23S160W02SR3-NXP.pdf
Description: RF Power LDMOS Transistors

Applications

* requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB)

AFT23S160W02SR3 Distributors

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AFT23S160W02SR3 Power LDMOS Transistors NXP

NXP AFT23S160W02SR3-like datasheet