AFT05MS004NT1 Datasheet (Freescale Semiconductor)

AFT05MS004NT1 - RF Power LDMOS Transistor

Part Number Manufacturer B1 RF Bead, Short 2743019447 Fair *Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C11 0.1 F Chip Capacitors CDR33BX104AKWS AVX C3, C10 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C9 180 pF Chip Capacitors ATC100B181JT300XT A

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N Channel Enhancement Mode Lateral MOSFET Designed for handheld two way radio applications with frequencies from 136 to 941 MHz.

The high gain, ruggedness and wideband performance of this device make it ideal for large signal, common source amplifier applications in handheld radio equipment.

Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB)

AFT05MS004NT1 Features

* Characterized for Operation from 136 to 941 MHz

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Integrated ESD Protection

* Integrated Stability Enhancements

* Wideband

* Full Power Across the Band

* Exceptional Thermal Performance

* Ext