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AFT05MS004NT1 RF Power LDMOS Transistor

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Description

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET Designed .
Part Number Manufacturer B1 RF Bead, Short 2743019447 Fair. Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C11 0.

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Features

* Characterized for Operation from 136 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext

Applications

* with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large
* signal, common
* source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB

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AFT05MS004NT1 Power LDMOS Transistor Freescale Semiconductor
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